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d a t a sh eet product speci?cation supersedes data of 1998 nov 23 file under integrated circuits, ic17 1999 jul 21 integrated circuits cgy2032ts dect 500 mw power amplifier
1999 jul 21 2 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts features power amplifier (pa) overall efficiency 55% 27.5 dbm saturated output power at 3.2 v 0 dbm input power 40 db linear gain operation without negative supply wide operating temperature range - 30 to +85 c ssop16 package. applications 1.88 to 1.9 ghz transceivers for dect applications 2 ghz transceivers [personal handy phone system (phs), digital cellular system (dcs) and personal communication services (pcs)]. general description the cgy2032ts is a gaas monolithic microwave integrated circuit (mmic) power amplifier specifically designed to operate from 3.6 v battery supply. no negative supply voltage is required for operation. quick reference data note 1. for conditions, see chapters ac characteristics and dc characteristics. ordering information block diagram symbol parameter (1) min. typ. max. unit v dd positive supply voltage - 3.2 - v i dd positive peak supply current - 350 - ma p o output power - 27.5 - dbm t amb ambient temperature - 30 - +85 c type number package name description version cgy2032ts ssop16 plastic shrink small outline package; 16 leads; body width 4.4 mm sot369-1 fig.1 block diagram. handbook, halfpage mgk735 10 6, 7 2, 3, 4 12, 13, 14 11 85 16 15 1 rfi v dd1 gnd1 gnd2 gnd3 v dd2 v dd3 rfo opm cgy2032ts
1999 jul 21 3 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts pinning symbol pin description v dd3 1 third stage supply voltage gnd3 2 third stage ground supply gnd3 3 third stage ground supply gnd3 4 third stage ground supply v dd2 5 second stage supply voltage gnd2 6 second stage ground supply gnd2 7 second stage ground supply v dd1 8 ?rst stage supply voltage n.c. 9 not connected gnd1 10 ?rst stage ground supply rfi 11 pa input gnd3 12 third stage ground supply gnd3 13 third stage ground supply gnd3 14 third stage ground supply opm 15 output pre-matching rfo 16 pa output fig.2 pin configuration. handbook, halfpage cgy2032ts mgk734 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v dd3 gnd3 gnd3 gnd3 v dd2 gnd2 gnd2 v dd1 n.c. gnd1 rfi gnd3 gnd3 gnd3 opm rfo functional description ampli?er the cgy2032ts is a 3-stage gaas power amplifier capable of delivering 500 mw (typ.) at 1.9 ghz into a 50 w load. each amplifier stage has an open-drain configuration. the drains have to be loaded externally by adequate reactive circuits which must also provide a dc path to the supply. the amplifier can be switched off by means of a single external pnp or pmos series switch connected between the battery and the amplifier drains. this switch can also be used to vary the actual supply voltage applied to the amplifier and hence, control the output power. this device is specifically designed to work with a duty factor of 50% and can work up to 100% with good thermal performance printed-circuit boards. biasing internal biasing is provided inside the amplifier for class ab operation. limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. on philips evaluation board. 2. on philips evaluation board, p tot maximum value is 800 mw. symbol parameter conditions min. max. unit v dd operating supply voltage note 1 - 5.2 v t j(max) maximum operating junction temperature - 150 c p tot total power dissipation note 2 - 450 mw p i input power - 15 dbm t stg storage temperature - 55 +125 c
1999 jul 21 4 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts handling do not operate or store near strong electrostatic fields. meets class 1 esd test requirements [human body model (hbm)], in accordance with mil std 883c - method 3015 . thermal characteristics note 1. on philips evaluation board, r th(j-a) value is typically 80 k/w. dc characteristics t amb =25 c; unless otherwise speci?ed. ac characteristics v dd = 3.2 v; f rf = 1900 mhz; p i = 0 dbm; t amb =25 c; duty factor d = 50%; 50 w impedance system; measured and guaranteed on the cgy2032ts evaluation board; the circuit diagram is shown in fig.5. note 1. the device is adjusted to provide nominal value of load power into a 50 w load. the device is switched off and a 6 : 1 load replaces the 50 w load. the device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air; note 1 145 k/w symbol parameter conditions min. typ. max. unit pins v dd1 ,v dd2 and v dd3 v dd positive supply voltage 1.8 3.2 4.2 v i dd positive peak supply current v dd = 3.2 v -- 800 ma symbol parameter conditions min. typ. max. unit p i input power - 5 0 +5 dbm d duty factor - 50 100 % p o output power 26.5 27.5 29 dbm i dd total drain current -- 500 ma h ef?ciency - 55 - % p leak rf leakage to output in power off state v dd =0v -- 40 - 35 dbm h2 second harmonic level --- 30 dbc h3 third harmonic level --- 35 dbc stab stability (spurious levels) note 1 -- 60 - dbc
1999 jul 21 5 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts fig.3 typical output power and efficiency versus input power at v dd = 3.2 v. handbook, full pagewidth 10 30 10 - 20 - 15 - 10 - 50 power output efficiency 5 p i (dbm) p o (dbm) 14 18 22 26 100 0 h (%) 20 40 60 80 fca009 fig.4 typical output power and efficiency versus supply voltage at p i = 0 dbm. handbook, full pagewidth 30 10 0 1.5 1 4.5 mgk738 2.5 3.5 0.5 4 23 14 18 22 26 100 0 20 40 60 80 p o (dbm) h (%) v dd (v) efficiency power output
1999 jul 21 6 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts application information the cgy2032ts is operated and tested in accordance with the circuit diagram shown in fig.5. supply voltage switching is achieved by a single bipolar pnp transistor. fig.5 evaluation board circuit diagram. thickness: 0.8 mm; substrate: fr4; e r = 4.7. (1) trl1: width = 500 m m; length = 10 mm. (2) trl2: width = 500 m m; length = 3000 m m. (3) trl3: width = 500 m m; length = 7 mm. (4) trl4: adjusted for optimum matching; width = 500 m m; length = 1 to 3 mm. handbook, full pagewidth mgk736 cgy2032ts 851 10 6, 7 15 2, 3, 4 12, 13, 14 trl4 (4) 22 pf 33 pf 10 nf 6.8 pf 1.2 pf 10 m f 6.8 pf trl1 (1) trl2 (2) trl3 (3) opm gnd3 gnd2 gnd1 v dd3 v dd2 v dd1 rfo rfi 11 16 47 k w 10 k w 220 w v dd v bat bc807 bc849c control
1999 jul 21 7 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts package outline unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.15 0.00 1.4 1.2 0.32 0.20 0.25 0.13 5.30 5.10 4.5 4.3 0.65 6.6 6.2 0.65 0.45 0.48 0.18 10 0 o o 0.13 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 0.75 0.45 1.0 sot369-1 94-04-20 95-02-04 w m q a a 1 a 2 b p d y h e l p q detail x e z e c l v m a x (a ) 3 a 0.25 18 16 9 pin 1 index 0 2.5 5 mm scale ssop16: plastic shrink small outline package; 16 leads; body width 4.4 mm sot369-1 a max. 1.5
1999 jul 21 8 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 jul 21 9 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method wave reflow (1) bga, sqfp not suitable suitable hlqfp, hsqfp, hsop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 jul 21 10 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts notes
1999 jul 21 11 philips semiconductors product speci?cation dect 500 mw power ampli?er cgy2032ts notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 67 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 printed in the netherlands 465008/04/pp 12 date of release: 1999 jul 21 document order number: 9397 750 05971

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